cmpd7000e enhanced specification surface mount dual, silicon switching diode series connection sot-23 case central semiconductor corp. tm r3 (21-march 2007) description: the central semiconductor cmpd7000e is an enhanced version of the cmpd7000 dual, series configuration, ultra-high speed switching diode. this device is manufactured by the epitaxial planar process, in an epoxy molded surface mount sot-23 package, designed for high speed switching applications. marking code: c5ce featured enhanced specifications: ? bv r from 100v min to 120v min. ? v f from 1.1v max to 1.0v max. ? ? ? maximum ratings (t a =25 c) symbol units peak repetitive reverse voltage v rrm 120 v average forward current i o 200 ma peak forward current i fm 500 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units bv r i r =100a 120 150 v i r v r =50v 300 na i r v r =50v, t a =125c 100 a i r v r =100v 500 na v f i f =1.0ma 0.55 0.59 0.65 v v f i f =10ma 0.67 0.72 0.77 v v f i f =100ma 0.85 0.91 1.0 v c t v r =0, f=1 mhz 1.5 2.6 pf t rr i r =i f =10ma, r l =100 ? , rec. to 1.0ma 2.0 4.0 ns ? ? ? enhanced specification
central semiconductor corp. tm sot-23 case - mechanical outline cmpd7000e enhanced specification surface mount dual, silicon switching diode series connection r3 (21-march 2007) marking code: c5ce lead code: 1) anode d2 2) cathode d1 3) anode d1, cathode d2 2 3 1 d1 d2
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